AFT09S200W02S 56 W RF power LDMOS transistor for cellular base station applications requiring very wide instantaneous bandwidth in the 920-960 MHz band
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ARCHIVED - AFT09S200W02SR3 920-960 MHz, 56 W Avg., 28 V Airfast<sup>?</sup> RF Power LDMOS Transistor Data Sheet
AFT09S200W02S 56 W RF power LDMOS transistor for cellular base station applications requiring very wide instantaneous bandwidth in the 920-960 MHz band
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